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This paper presents stability analysis of large-scale SRAM arrays directly after terminating NBTI stress. While the impact of static NBTI is well examined for cells and arrays, the fast-recovering component was not yet measured on SRAM arrays. The novel method presented here analyzes the flipping of cells directly after the supply voltage was lowered to a specific value where the structure is most...
This paper presents Read Margin analysis for large SRAM arrays with a fast test method that even can be realized in dual-VDD product chips. Classical Static Noise Margin (SNM) is mostly suitable for single-cell simulation. Read Margin (RM) measurement allows analysis of large arrays and correlates to SNM, but requires a dedicated test structure and long measurement time. The presented method analyzes...
This paper presents read margin analysis for large SRAM arrays with a fast test method that even can be realized in dual-VDD product chips. Classical Static Noise Margin (SNM) is mostly suitable for single-cell simulation. Read Margin (RM) measurement allows analysis of large arrays and correlates to SNM, but requires a dedicated test structure and long measurement time. The presented method analyzes...
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